Kingston Memorija PC-21300 HyperX Fury HX426C15FBK2/8 DDR4 2666Mhz 2x4GB - 8 GB
Kingston
Računala i periferija
Kingston Memorija PC-21300 HyperX Fury HX426C15FBK2/8 DDR4 2666Mhz 2x4GB - 8 GB
1X MultiPlusCard bodovi 7
ID C000TC0
/Katalog-Racunala-i-periferija-Komponente/Kingston-Memorija-PC-21300-HyperX-Fury-HX426C15FBK2-8-DDR4-2666Mhz-2x4GB-8-GB/p/C000TC0
Kratki info
- 288 pin konektor
Detaljan opis
Specifikacije
SPECIFICATIONS
*Power will vary depending on the SDRAM used.
HX426C15FBK2/8
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR4-2666 CL15 288-Pin DIMM
Continued >>
kingston.com/hyperx
FEATURES
HyperX
HX426C15FBK2/8
is a kit of two 512M x 64-bit (4GB)
DDR4-2666 CL15 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 512M x 8-bit FBGA components per
module.
Each module kit supports Intel® Extreme Memory
Profiles (Intel® XMP) 2.0.
Total kit capacity is 8GB. Each
module has been tested to run at DDR4-2666 at a low latency timing
of 15-17-17 at 1.2V.
Additional timing parameters are shown in
the Plug-N-Play (PnP) Timing Parameters section below.
The JEDEC standard electrical and mechanical specifications
are as follows:
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
15 cycles
45ns(min.)
260ns(min.)
26.25ns(min.)
TBD W*
94 V - 0
0
o
C to +85
o
C
-55
o
C to +100
o
C
JEDEC/XMP TIMING PARAMETERS
•
JEDEC/PnP: DDR4-2666 CL15-17-17 @1.2V
DDR4-2400 CL14-16-16 @1.2V
DDR4-2133 CL12-14-14 @1.2V
•
XMP Profile #1: DDR4-2666 CL15-17-17 @1.2V
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks, 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsink
*Power will vary depending on the SDRAM used.
HX426C15FBK2/8
8GB (4GB 512M x 64-Bit x 2 pcs.)
DDR4-2666 CL15 288-Pin DIMM
Continued >>
kingston.com/hyperx
FEATURES
HyperX
HX426C15FBK2/8
is a kit of two 512M x 64-bit (4GB)
DDR4-2666 CL15 SDRAM (Synchronous DRAM) 1Rx8, memory
module, based on eight 512M x 8-bit FBGA components per
module.
Each module kit supports Intel® Extreme Memory
Profiles (Intel® XMP) 2.0.
Total kit capacity is 8GB. Each
module has been tested to run at DDR4-2666 at a low latency timing
of 15-17-17 at 1.2V.
Additional timing parameters are shown in
the Plug-N-Play (PnP) Timing Parameters section below.
The JEDEC standard electrical and mechanical specifications
are as follows:
CL(IDD)
Row Cycle Time (tRCmin)
Refresh to Active/Refresh
Command Time (tRFCmin)
Row Active Time (tRASmin)
Maximum Operating Power
UL Rating
Operating Temperature
Storage Temperature
15 cycles
45ns(min.)
260ns(min.)
26.25ns(min.)
TBD W*
94 V - 0
0
o
C to +85
o
C
-55
o
C to +100
o
C
JEDEC/XMP TIMING PARAMETERS
•
JEDEC/PnP: DDR4-2666 CL15-17-17 @1.2V
DDR4-2400 CL14-16-16 @1.2V
DDR4-2133 CL12-14-14 @1.2V
•
XMP Profile #1: DDR4-2666 CL15-17-17 @1.2V
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP - 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks, 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• Height 1.340” (34.04mm), w/heatsink
Interna memorija | 8 GB |
Vrsta radne memorije | DDR4 |
Radni takt memorije | 2666 MHz |
Jamstvo | 36 mj |